II-VI Epitaxial MOCVD

At Masimo Semiconductor, our extensive MOCVD experience and capacity enable us to grow a wide range of II-VI epitaxial structures to our own or to customer’s designs. We recognize that time-to-market is critical to our customers' success, so we strive to provide the fastest turnaround times possible. Our epitaxy engineers work closely with customers to develop and improve proprietary structures for specific applications.

MOCVD Materials:

  • ZnSSe
  • Zn Mg SSe
  • Zn Cd Se
  • CdTe
  • ZnCdTe
  • CdS

Typical Devices:

  • Lasers
  • LEDs
  • Detectors
  • Solar cells
  • Night Vision

Typical Applications

  • Military
  • Commercial
  • Automotive 




Custom Applications Are Our Specialty

We can provide the following characterization data for our epitaxial wafers (or witness wafers, as appropriate):

  •  Nomarksi surface inspection and defect count
  • Spectral reflectance
  • Photoluminescence mapping
  • Double crystal x-ray diffraction for lattice constant and composition
  • Hall and Polaron carrier concentration

Working with outside laboratory partners, we also routinely provide other measurements, such as:

  • SEM
  • RBS
  • SIMS
  • TEM
  • AFM
  • EDAX

If your application is not listed, please contact us – we have a wealth of experience in other III-V structures and applications.

Brochures & Request Information

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