At Masimo Semiconductor, our extensive MOCVD experience and capacity enable us to grow a wide range of GaAs and InP epitaxial structures to our own or to customer’s designs. We recognize that time-to-market is critical to our customers' success, so we strive to provide the fastest turnaround times possible. Masimo Semiconductor has a number of standard structures available to meet many device needs and speed prototype development. Our epitaxy engineers work closely with customers to develop and improve proprietary structures for specific applications.

Applications include:

• APDs and PINs
• QWIPs
• QW modulators
• THz lasers
• Quantum cascade devices
• VCSELs (600 nm to 1550 nm)
• LEDs (600 nm to 1550 nm)
• Lasers (600 nm to 1550 nm)
• RCLEDs

MOCVD Materials: InP InGaAs InAlAs InAsP InGaAlAs InGaAsP GaAs AlGaAs InGaAlAs GaAsP AlGaP InGaP InAlP InAlGaP AlGaSb GaSb InAsSb

Typical Devices: Plasma filters Laser power converters LEDs/RCLEDs DH, QW, DFB lasers VCSELs Detectors Thermophotovoltaics QWIPs HBTs - modulators Photocathodes Varactors, pins, gunns Solar cells HEMTs, FETs Visible lasers Visible VCSELs Tandem solar cells

Typical Applications: Sensors Infra-red cameras Wireless communications Wireless power conversion Thermal power conversion Night vision GPS Automotive Medical systems Satellite systems Solid state lasers CD, MiniDisc Fiber amplifiers Microwave TxRx subsystems Displays DVD/CD Illumination Medical Pointers Satellite systems

 

Custom Applications Are Our Specialty

We can provide the following characterization data for our epitaxial wafers (or witness wafers, as appropriate):

• Nomarksi surface inspection and defect count
• Spectral reflectance
• Photoluminescence mapping
• Double crystal x-ray diffraction for lattice constant and composition
• Hall and Polaron carrier concentration

Working with outside laboratory partners, we also routinely provide other measurements, such as:

• SEM
• RBS
• SIMS
• TEM
• AFM
• EDAX

If your application is not listed, please contact us - we have a wealth of experience in other III-V structures and applications.

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