Masimo Semiconductor Facilities

Masimo Semiconductor’s large, modern offices and laboratories in Hudson, New Hampshire provide MOCVD and fabrication lines in a state of the art class 100/1000 facility.

MOCVD Epitaxial Growth Facility

MOCVD Epitaxial Growth Facility

Masimo Semiconductor operates MOCVD (Metal Organic Chemical Vapor Deposition) epitaxial reactors in multiple shifts, providing ample capacity for development and production of 50mm, 75mm, and 100mm GaAs and InP based epitaxial wafers. Our reactors are configured for a variety of material systems and process conditions.


C and Zn p-dopants; Si, Se, and Te n-dopants

Optoelectronic applications:

VCSELs, laser diodes, LEDs, SOAs, photodetectors, waveguides

Electronic applications:

HBTs, HEMTs, FETs, diodes, microwave devices

Masimo Semiconductor has extensive experience in the growth of most III-V epitaxial structures:

GaAs   InP   Other  
GaAs   InP   GaP, GaAsP  
GaAlAs   InGaP   InAs, InSb  
GaInAs   InGaAs   AlAs, InAlAs  
GaInAlAs   InGaAsP, InGaAlP   GaAs on Si  
Foundry Services Facility

    Foundry Services Facility

Masimo Semiconductor maintains a wafer-processing laboratory that is used for custom and production services. Capabilities include CAD design of photolithographic mask sets, development of custom device processes as well as routine fabrication processes. Capabilities range from prototype development to full production.

Equipment and processes include:

  • Semi and automatic wafer dicing for die separation
  • Wafer mounting to tape for dicing/cleaving machines
  • Wet oxide confinement growth station
  • Strip/de-scum resist
  • Contact/proximity photolithography
  • Coat bake system positive resist, polyimide, negative resist
  • Photoresist development station
  • Solvent clean stainless hood with fire suppression for wafer cleaning
  • Inspection microscopes for measurement of critical dimensions
  • Flood UV exposure
  • Ammonia vapor system for reversing resist images
  • Oven bake resist
  • Cassette rinse/dry
  • Silicon nitride, silicon dioxide, silicon
  • Oxynitride PECVD
  • Reactive ion etch: vertical sidewall/trench etching of GaAs/InP related compounds of C12, BC13, A1, CF4, SF6
  • Reactive ion etch: anisotropic etching silicon nitride, silicon dioxide, silicon oxynitride
  • Reactive index and dielectric film thickness measurement
  • Extensive selective etch library
  • Acid compatible hood for wafer etching
  • Base compatible hood for wafer etching
  • Stylus contact contour measurement system
  • Electrical proble station for contact resistance measurement
  • Rapid thermal annealing/slow furnace
  • Annealing/alloying of metal films
  • Optical coating evaporation
  • Electron beam evaporation of N-Ohmic metals
  • Thermal evaporation of N-Ohmic metals - T1, Pt, Au, Ni, Ge, Zn, Ag, AL, Pd
  • Temporary carrier mounting for lapping and polishing
  • Heat uniform hot plate
  • Non-contact thickness measurement system for lap/polish
  • Pick & place: die removal from carrier into trays
  • Die shear and wire pulling testing
  • Die and device inspection
  • Video caliper system
Device Fabrication Facility

Device Fabrication Facility

Masimo Semiconductor operates a complete compound semiconductor device fabrication line housed in a 13,500 square foot, class 100/1000 clean room.

Process equipment includes:

  • Photolithography (1 µ critical dimension)
  • Wet etch and dry etch (reactive ion etching)
  • PECVD silicon nitride, silicon oxynitride, SiO2
  • Metallization
  • Dielectric deposition
  • Optical thin film deposition
  • RTP
  • Wafer polishing and lapping
  • Wafer dicing (automated sawing & cleaving)
  • Die bonding
  • Wire bonding
  • Final test
Materials Characterization and Final Test Facility

Materials Characterization and Final Test Facility

An essential element in developing improved products and maintaining the quality of our production is our extensive material characterization and final test facility.

Masimo Semiconductor has extensive in-house instrumentation and test equipment.

In-house instrumentation:

  • Double-crystal x-ray diffraction
  • Photoluminescence and reflectivity mapping
  • Polaron and Hall carrier concentration
  • Quantum efficiency
  • Spectral response
  • Inspec surface inspection
  • Nomarski microscopy
  • Semiconductor parameter analysis
  • Automated on-wafer device test

Brochures & Request Information

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